Fowler-Nordheim tunneling characterization on Poly1-Poly2 capacitors for the implementation of analog memories in CMOS 0.5 ??m technology Academic Article uri icon

abstract

  • The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 ??m technology are presented. This characterization allows the development, design, and characterization of a newcurrent-mode analog nonvolat