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Please use this identifier to cite or link to this item: http://ri.uaemex.mx/handle20.500.11799/32544
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dc.contributor.authorENRIQUE JOSE TINAJERO PEREZen_EU
dc.contributor.authorJes煤s Ezequiel Molinar Solisen_EU
dc.contributor.authorRODOLFO ZOLA GARCIA LOZANOen_EU
dc.contributor.authorPedro Rosales Quinteroen_EU
dc.contributor.authorJOSE MIGUEL ROCHA PEREZen_EU
dc.contributor.authorALEJANDRO DIAZ SANCHEZen_EU
dc.contributor.authorJOSE ARTURO MORALES ACEVEDOen_EU
dc.creatorENRIQUE JOSE TINAJERO PEREZ-
dc.creatorJes煤s Ezequiel Molinar Solis-
dc.creatorRODOLFO ZOLA GARCIA LOZANO-
dc.creatorPedro Rosales Quintero-
dc.creatorJOSE MIGUEL ROCHA PEREZ-
dc.creatorALEJANDRO DIAZ SANCHEZ-
dc.creatorJOSE ARTURO MORALES ACEVEDO-
dc.date2014-02-23-
dc.date.accessioned2019-03-12T23:43:27Z-
dc.date.available2019-03-12T23:43:27Z-
dc.identifierhttp://hdl.handle.net/20.500.11799/32544-
dc.identifier.urihttp://ri.uaemex.mx/handle20.500.11799/32544-
dc.descriptionThe experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 饾渿m technology are presented. This characterization allows the development, design, and characterization of a newcurrent-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.-
dc.languagespa-
dc.publisherHindawi Publishing Corporation-
dc.rightsinfo:eu-repo/semantics/openAccess-
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0-
dc.source1687-8124-
dc.subjectFowler-Nordheim-
dc.subjectinfo:eu-repo/classification/cti/7-
dc.titleFowler-Nordheim tunneling characterization on Poly1-Poly2 capacitors for the implementation of analog memories in CMOS 0.5 饾渿m technology-
dc.typearticle-
dc.audiencestudents-
dc.audienceresearchers-
item.fulltextNo Fulltext-
item.grantfulltextnone-
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