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http://ri.uaemex.mx/handle20.500.11799/32544| Title: | Fowler-Nordheim tunneling characterization on Poly1-Poly2 capacitors for the implementation of analog memories in CMOS 0.5 饾渿m technology | Authors: | ENRIQUE JOSE TINAJERO PEREZ Jes煤s Ezequiel Molinar Solis RODOLFO ZOLA GARCIA LOZANO Pedro Rosales Quintero JOSE MIGUEL ROCHA PEREZ ALEJANDRO DIAZ SANCHEZ JOSE ARTURO MORALES ACEVEDO |
Keywords: | Fowler-Nordheim;info:eu-repo/classification/cti/7 | Publisher: | Hindawi Publishing Corporation | Description: | The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 饾渿m technology are presented. This characterization allows the development, design, and characterization of a newcurrent-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture. | URI: | http://ri.uaemex.mx/handle20.500.11799/32544 | Other Identifiers: | http://hdl.handle.net/20.500.11799/32544 | Rights: | info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0 |
| Appears in Collections: | Producci贸n |
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