The effect of anti-agglomeration and enhanced photoluminescence after high-temperature annealing of Zn-ZnO nanowires in nitrogen at-mosphere is reported. The Zn-ZnO nanowires were deposited by the hot filament chemical vapor deposition technique and subsequentlyannealed at 1100±C in oxygen or nitrogen atmospheres. It was found that under both annealing atmospheres, the structure of the nanowireswas completely oxidized. Morphological studies suggest that annealing under oxygen-rich atmosphere, grain growth occurs, resulting in acontinuous surface with a micrograin-shaped structure. However, it seems that nitrogen-rich annealing partially prevents complete agglom-eration and longitudinal structures composed by nanometric grains were observed. Although photoluminescence properties of the annealednanowires are improved in both annealing atmospheres, it was observed that the PL spectrum of nanowires annealed in nitrogen showed astronger UV emission than that of the oxygen annealed nanowires.