Fowler-Nordheim tunneling characterization on Poly1-Poly2 capacitors for the implementation of analog memories in CMOS 0.5 𝜇�m technology

Abstract

The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 𝜇m technology are presented. This characterization allows the development, design, and characterization of a newcurrent-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.