High-density plasmas are often used either in the preparation of thin films or for the modification of surfaces; nitriding. However, except for collision-driven chemical reactions the electrons present are not used, although electron bombardment heating of the work piece nearly always occurs. Principally it is the ions and neutrals that are utilised for materials processing. By suitable biasing of a conducting source material the electrons can be extracted from a highdensity low-pressure plasma to such an extent that evaporation of this source material can be achieved. Due to the presence of the plasma and the flux of electrons a large proportion of the evaporant is expected to be ionised. We have used this novel arrangement to prepare thin films of carbon using a resonant high-density argon plasma and a water cooled rod of high purity graphite. Multiple substrates were used both outside of, and immersed in, the plasma. We report the characteristics of the plasma (electron temperature and density, the ion energy and flux, and optical emission spectra), the deposition process (the evaporation rate and ion/neutral ratio), and the film properties (IR and UV/Vis absorption spectra, Raman spectra, elemental analysis, hardness and refractive index)